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| Excelics * * * * * EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features LOW COST SURFACE-MOUNT PLASTIC PACKAGE +34.0dBm TYPICAL OUTPUT POWER 12.0dB TYPICAL POWER GAIN AT 2GHz 0.8dB TYPICAL NOISE FIGURE AT 2GHz +48dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.5 X 4800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY $ &# * * * 6285&( '5$,1 *$7( Applications * * Analog and Digital Wireless System HPA (Top View) All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=7V, Ids=750mA Gain at 1dB Compression f = 2GHz Vds=7V, Ids=750mA Power Added Efficiency at 1dB Compression Vds=7V, Ids=750mA f = 2GHz Noise Figure f = 2GHz Vds=5V, Ids=300mA Vds=5-7V, Ids=750mA Output 3rd Order Intercept Point f = 2GHz Vds=5-7V, Ids=750mA Vds=5V, Ids=300mA Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=14mA -11 -7 MIN 32.5 10.0 TYP 34.0 12.0 45 0.8 2.0 48 39 880 560 1360 720 -2.0 -15 -14 14* o MAX UNIT dBm dB % dB dBm 1760 mA mS -3.5 V V V C/W Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA Thermal Resistance * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 120mA 32dBm 175oC -65/175oC 10 W 7V -4V 1.2A 20mA @ 3dB Compression 150oC -65/150oC 8.4 W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Typical Performance S21 Distribution Noise Figure & IP3 EFA480C -SO T89 (5 V , 2 G H z) 2.5 2 NF [dB ] 1.5 1 0.5 0 0 20 0 40 0 I ds [m A ] 60 0 80 0 50 40 30 20 10 0 NF IP 3 S-PARAMETERS S-PARAMETERS 7V, 750mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 --- S11 --MAG 0.914 ANG --- S21 --MAG ANG 138.4 117.4 105.5 97.4 91.3 70.9 55.6 40.8 26.4 11.3 -5.2 -23.4 -40.5 -56.0 -69.8 -82.8 --- S12 --MAG 0.015 0.024 0.025 0.026 0.028 0.034 0.052 0.062 0.074 0.087 0.100 0.110 0.113 0.113 0.109 0.108 ANG 56.1 39.5 31.1 28.5 25.9 25.3 23.7 20.0 13.7 4.9 -5.5 -18.7 -31.5 -43.2 -53.7 -63.8 --- S22 --MAG ANG Freq (GHz) 0.1 0.2 0.3 0.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 --- S11 --MAG 0.953 ANG 5V, 150mA --- S21 --MAG ANG 141.6 120.2 107.7 99.3 93.1 72.8 57.9 43.6 29.8 14.9 -1.0 -18.7 -35.4 -50.4 -63.8 -76.3 --- S12 --MAG 0.018 0.026 0.031 0.030 0.033 0.039 0.059 0.070 0.083 0.097 0.111 0.120 0.124 0.123 0.120 0.118 ANG 68.2 39.7 29.3 28.1 27.1 24.0 21.8 17.8 11.0 2.6 -8.0 -21.8 -34.2 -46.1 -56.5 -66.2 --- S22 --MAG ANG -74.6 18.618 9.412 7.342 5.983 3.095 2.625 2.013 1.680 1.463 1.303 1.142 0.967 0.816 0.687 0.589 0.552 -166.3 0.652 -169.9 0.677 -174.6 0.692 -177.9 0.698 0.686 0.616 0.614 0.602 0.587 0.570 0.579 0.602 0.652 0.685 0.705 178.6 168.9 153.0 143.4 133.9 122.7 109.6 92.5 75.1 61.1 50.8 41.3 -71.1 17.133 9.150 7.156 5.838 3.037 2.596 2.002 1.671 1.465 1.313 1.154 0.982 0.831 0.706 0.611 0.586 -167.0 0.678 -170.2 0.712 -174.9 0.731 -178.2 0.742 0.736 0.676 0.673 0.662 0.647 0.626 0.632 0.651 0.693 0.721 0.733 178.3 168.3 152.7 142.9 133.2 121.7 108.6 91.7 74.5 60.9 50.4 41.0 0.898 -113.3 12.814 0.898 -134.4 0.897 -147.5 0.893 -156.3 0.886 0.831 0.826 0.818 0.806 0.808 0.797 0.812 0.836 0.856 0.859 179.0 161.0 146.7 133.2 119.3 103.3 85.9 69.0 53.9 41.4 30.1 0.929 -111.0 12.353 0.916 -133.1 0.908 -146.6 0.902 -155.7 0.886 0.828 0.822 0.812 0.799 0.800 0.790 0.806 0.830 0.851 0.855 179.2 161.0 146.4 132.9 119.0 103.0 85.6 68.8 54.0 41.4 30.2 |
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